Spintronics research has witnessed significant advancements, driven by the need for more efficient and compact electronic devices. Spin-based logic gates have been developed to replace traditional CMOS technology, utilizing the spin degree of freedom to manipulate information. Graphene-based spintronics has shown promise due to its exceptional carrier mobility and spin lifetime. Magnetic tunnel junctions with graphene have enabled high-performance spin valves. Theoretical models such as density functional theory (DFT) and ab initio calculations have guided experimental investigations of novel materials and devices. Spin-based memory technologies, including magnetic tunnel junctions, have been explored for their potential to replace traditional flash memory. These advancements have significant implications for the development of future computing systems and artificial intelligence applications.
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